Solid-state Electronic devices

Trang chủ/ Solid-state Electronic devices

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A course material

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Le Tuan

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Nhà Xuất Bản Bách Khoa Hà Nội

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NXB	Nhà Xuất Bản Bách Khoa Hà Nội	Người dịch:
Năm XB:	2011	Loại sách:	Sách giấy;
Khổ sách:	16 x 24	Số trang:	288
Quốc gia:		Ngôn ngữ:	en
Mã ISBN:		Mã ISBN Điện tử:

Giới thiệu
Mục lục

For understanding and designing new devices with newly working principles it is necessary to have a good background on the “traditional” devices. Many Vietnamese universities and colleges are now expanding education programs with intensive study on this topic. Unfortunately, there are some difficulties for numerous Vietnamese students to approach to a systematic literature for explanation physical phenomena processing in semiconductor devices. This textbook is an effort to present a basic knowledge about physics of solid state electronic devices for graduate students and undergraduate students with special education programs. It may be useful for lectures and engineers working in this field.

This textbook is consisted from ten chapters. Chapter 1 is a very brief overview of semiconductor material properties. Chapter 2 recalls some fundamental points of quantum mechanics necessarily for description of physical processes in solid state materials and devices. Chapters 3 represents the main features of energy band theory and the band structure for the most widely used semiconductors Si and GaAs. Chapter 4 gives the basic knowledge on the carrier statistics in equilibrium, while chapter 5 provides information about carrier transport phenomena. Chapter 6 is a detail description of Shockley’s theory of p–n junction and relative effects. A short chapter 7 has information about the structure and electron transport over the potential barrier in metal–semiconductor junction. Chapter 9 is a description with other kind of objects, where metal–insulator–semiconductor – and its particular case, metal–oxide– semiconductor – structures are under consideration. Chapter 8 and 10 are devoted to physics of bipolar and metal–oxide–semiconductor field–effect transistors, respectively.

PREFACE
Chapter 1. BASIC SEMICONDUCTOR PROPERTIES
1.1. Semiconductor device application tendency
1.2. General Material Properties
1.3. Crystal Structures
1.4. Problems
Chapter 2. FUNDAMENTAL QUANTUM CONCEPTS
2.1. The Bohr model
2.2. Black body radiation
2.3. Basic Formalism
2.4. The Heisenberg uncertainty principle
2.5. Simple Quantum Mechanics Problem Solutions
2.6. Problems
Chapter 3. ENERGY BAND THEORY
3.1. The Block Theorem
3.2. Concept of effective mass
3.3. The Kronig–Penney model
3.4. Energy band structures of Si and GaAs
3.5. Problems
Chapter 4. DENSITY OF STATES AND EQUILIBRIUM CARRIER CONCENTRATION
4.1. Density of states in bulk semiconductors (3D)
4.2. Density of states in semiconductors with reduced dimensionality (2–D, 1–D, 0–D)
4.3. Effective density of states in 3–D, 2–D, 1–D, and 0–D semiconductors
4.4. Carrier concentration at thermal equilibrium
4.5. Problems
Chapter 5. CARRIER TRANSPORT PHENOMENA
5.1. Carrier Drift and Mobility
5.2. Resistivity and Hall effect
5.3. High electric field behavior of carriers
5.4. Recombination, Generation, and Carrier Lifetimes
5.5. Diffusion
5.6. Thermionic emission
5.7. Tunneling effect
5.8. Space–Charge Effect
5.9. Basic equations
5.10. Problems
Chapter 6. p – n JUNCTION
6.1. Depletion region
6.2. Current – voltage characteristics
6.3. Junction breakdown
6.4. Transient behavior and noise
6.5. Heterojunctions
6.6. Device implementation and applications
6.7. Problems
Chapter 7. METAL – SEMICONDUCTOR JUNCTION
7.1. Formation of M–S Barrier
7.2. Carrier Transport through M–S Junction
7.3. Barrier Height Measurement
7.4. Ohmic Contact
7.5. Problems
Chapter 8. BIPOLAR TRANSISTOR (BJT)
8.1. Basic Current – Voltage Relationships
8.2. Current Gain
8.3. Output Characteristics
8.4. Deviations from the Ideal Case
8.5. High Frequency Characteristics
8.6. Examples of BJT applications
8.7. Problems
Chapter 9. METAL – INSULATOR – SEMICONDUCTOR (MIS) AND METAL – OXIDE – SEMICONDUCTOR (MOS) STRUCTURES
9.1. The Ideal MIS Structures
9.2. The MOS Structures
9.3. Problems
Chapter 10. METAL – OXIDE – SEMICONDUCTOR FIELD – EFFECT TRANSISTOR (MOSFET)
10.1. Types of Field–Effect Transistors (FETs)
10.2. Basic Device Characteristics
10.3. Non–Uniform Channel Doping
10.4. MOSFET scaling and the ballistic carrier transport
10.5. MOSFETs in memory elements and other applications
10.6. Problems
References